mmbt4403 features pnp epitaxial silicon, planar design collector-emitter voltage v ce = -40v collector current i c =-600ma complimentary (npn) device: mmbt4401 mechanical data case: sot-23 terminals: solderable per mil-std-202, method 208 approx weight: 0.02 grams marking: m3a absolute maximum ratings parameter symbol value unit collector - emitter voltage v ce0 -40 v collector - base voltage v cb0 -40 v emitter ? base voltage v eb0 -5.0 v collector current - continuous i c -600 ma max power dissipation (note 1) p tot 225 mw junction and storage temperature range t j , t stg -55 to 150 thermal characteristics parameter symbol value unit thermal resistance , junction to ambient (note 1) r j a 556 /w note 1: transistor mounted on fr-5 board 1.0 x 0.75 x 0.062 in. using minimum recommended pad. pnp general purpose switching transistor voltage power 40v 225m w 2 emitter top view 3 collector 1 base 2 emitter top view 3 collector 1 base base 3 collector emitter 2 1 base 3 collector emitter base 3 collector emitter 2 1
mmbt4403 electrical characteristics (t j = 25 ? c, unless otherwise noted) parameter symbol test condition min. typ. max. unit collector - emitter breakdown voltage v (br) ce0 i c =-1.0ma, i b =0 -40 - - v collector - base breakdown voltage v (br) cb0 i c =-100ua, i e =0 -40 - - v emitter - base breakdown voltage v (br) eb0 i e =-100ua, i c =0 -5.0 - - v base cutoff current i bev v ce =-35v, v eb =-0.4v - - -100 na collector cutoff current i cex v ce =-35v, v eb =-0.4v - - -100 na dc current gain h fe i c =-0.1ma, v ce =-1.0v i c =-1.0ma, v ce =-1.0v i c =-10ma, v ce =-1.0v i c =-150ma, v ce =-2.0v i c =-500ma, v ce =-2.0v 30 60 100 100 20 - - - - - - - - 300 - - collector - emitter saturation voltage v ce(sat) i c =-150ma, i b =-15 ma i c =-500ma, i b =-50ma - - - - -0.4 -0.75 v base - emitter saturation voltage v be(sat) i c =-150ma, i b =-15ma i c =-500ma, i b =-50ma -0.75 - - - -0.95 -1.3 v current-gain ? bandwidth product f t i c =-20ma, v ce =-10v, f=100mhz 200 - - mhz collector - base capacitance c cbo v cb =-5.0v, i e =0, f=1mhz - - 8.5 pf emitter - base capacitance c ebo v cb =-0.5v, i c =0, f=1mhz - - 30 pf delay time t d - - 15 ns rise time t r v cc =-30v, v be =-2.0v, i c =-150ma, i b1 =-15ma - - 20 ns storage time t s - - 225 ns fall time t f v cc =-30v, i c =-150ma, i b1 =i b2 =15ma - - 30 ns switching time equivalent test circuits fig. 1. turn-on time fig. 2. turn-off time c s < 10pf 200 ? 1.0k ? 1n916 -30v 0 +2v 10 to 100ns duty cycle ~ 2.0% -16v < 2ns c s < 10pf 200 ? 1.0k ? 1n916 -30v 0 +2v 10 to 100ns duty cycle ~ 2.0% -16v < 2ns c s < 10pf 200 ? 1.0k ? 1n916 -30v 0 +14v 1 to 100us duty cycle = 2.0% -16v <20ns +4v c s < 10pf 200 ? 1.0k ? 1n916 -30v 0 +14v 1 to 100us duty cycle = 2.0% -16v <20ns +4v
mmbt4403 electrical characteristics curves 100 150 200 250 300 350 400 0.1 1 10 100 1000 collector current, i c (ma) hf e t j = 25 ? c t j = 150 ? c t j = 100 ? c v ce = 10v 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 0.1 1 10 100 1000 collector current, i c (ma) v be (on) t j = 25 ? c t j = 100 ? c t j =150 ? c fig. 3. typical h fe vs collector current fig. 4. typical v be vs collector current 0.000 0.050 0.100 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 0.1 1 10 100 1000 collector current, i c (ma) v ce (sat) t j = 25 ? c t j = 150 ? c i c /i b = 10 fig. 5. typical v ce (sat) vs collector current 1 10 100 0.1 1 10 100 reverse voltage (v) capacitance (pf ) c ob (cb) c ib (eb) fig. 6. typical capacitances vs reverse voltage
mmbt4403 recommented pad layout order information mmbt4403 t/r7 ? 7? reel, 3,000 units/reel mmbt4403 t/r13 ? 13? reel, 10,000 units/reel copyright panjit international, inc 2005 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notic e. panjit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. panjit products ar e not authorized for use in life support devices or systems. panjit does not convey any license under its patent rights or rights of others.
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